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SSM3J15CT
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J15CT
High-Speed Switching Applications Analog Switch Applications
* * Optimum for high-density mounting in small packages Low ON-resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V)
0.250.03 0.60.05 0.50.03
Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -30 20 -100 -200 100 150 -55~150 Unit V V mA mW C C
1.00.05
0.650.02 0.250.03 0.350.02 0.150.03
0.050.03
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
CST3 JEDEC JEITA TOSHIBA 2-1J1B
Weight: 0.75 mg (typ.)
Note 1: Mounted on an FR4 board 2 (10 mm x 10 mm x 1.0 t, Cu Pad: 100 mm )
Marking (Top View)
Polarity mark
Pin Condition (Top View)
Polarity mark (on the top)
Equivalent Circuit
3
S1
1 3 2
1. Gate 2. Source 3. Drain
1
2
*Electrodes: on the bottom
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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0.38 +0.02 -0.03
0.050.03
SSM3J15CT
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff VDD = -5 V, ID = -10 mA, VGS = 0~-5 V VDS = -3 V, VGS = 0, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 ID = -0.1 mA, VGS = 0 VDS = -30 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -10 mA ID = -10 mA, VGS = -4 V ID = -1 mA, VGS = -2.5 V MIN. -30 -1.1 20 TYP. 8 14 9.1 3.5 8.6 65 175 MAX. 1 -1 -1.7 12 32 UNIT A V A V mS pF pF pF ns

Switching Time Test Circuit
(a) Test circuit
0 IN 50 RL VDD -5 V 90% OUT
(b) VIN
0V
10%
-5V
10 s
(c) VOUT
VDS (ON)
90% 10% tr ton toff tf
VDD = -5 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C
VDD
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device.
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SSM3J15CT
-250
ID - VDS
Common Source Ta=25C -10 -7 -5 -4 -1000 Common Source VDS=-3V -100
D rain C urrent ID (m A)
ID - VGS
-200
D rain C urrent ID (m A)
-150 -3.3 -100 -3.0 -2.7 -50 -2.5 VGS=-2.3V 0 -0.5 -1 -1.5 Drain-Source Voltage VDS(V) -2
-10
Ta=100C 25C
-1
-25C
-0.1
0
-0.01 0 -1 -2 -3 -4 Gate-Source Voltage VGS(V) -5
40
D rain-Sourc e ON -res is tanc e R D S(ON ) ( )
RDS(ON) - ID
D rain-Sourc e ON -res is tanc e R D S(ON ) ( )
20 18 16 14 12 10 8 6 4 2
RDS(ON) - VGS
Source Common ID=-1mA
Common Source Ta=25C 30
20
Ta=100C 25C -25C
10
VGS=-2.5V -4V
0 -1 -10 -100 Drain Current ID(mA) -1000
0 0 -2 -4 -6 -8 Gate-Source Voltage VGS (V) -10
30 Common Source
D rain-Sourc e ON -res is tanc e R D S(ON ) ( )
RDS(ON) - Ta
-2 -1.8 G ate thres hold Voltage Vth(V) -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2
Vth - Ta
Common Source ID=-0.1mA VDS=-3V
20 VGS=-2.5V,ID=-1mA
10
-4V,-10mA
0 -25
0
25
50 75 100 125 Ambient temparature Ta(C)
150
0 -25
0
25
50 75 100 Ambient temparature Ta(C)
125
150
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SSM3J15CT
|Yfs| - ID
1000 Common Source VDS=-3V Ta=25C 100 -250 Common Source VGS=0V Ta=25C
IDR - VDS
Drain reverse current IDR (mA) -1000
Forward transfer admittance |Yfs| (mS)
-200
-150
-100
10
-50
1 -1 -10 -100 Drain current ID (mA)
0 0 0.2 0.4 0.6 0.8 1 Drain-Source voltage VDS (V) 1.2 1.4
100
C - VDS
Common Source VGS=0V f=1MHz Ta=25C
10000
t - ID
Common Source VDD=-5V VGS=0~-5V Ta=25C
toff Switching timet (ns) 1000 tf
Capacitance C (pF)
10 Ciss Coss
100
ton tr
Crss 1 -0.1 -1 -10 Drain-Source voltage VDS (V) -100 10 -0.1 -1 -10 Drain Current ID (mA) -100
PD - Ta 250 mounted on FR4 board (10mmx10mmx1.0t Cu Pad:100mm2)
Drain power dissipation PD(mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160 Ambient temperature (C)
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SSM3J15CT
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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